Transphorm TP65H050WSQA

TP65H050WSQA
Part No.:
TP65H050WSQA
Manufacturer:
Transphorm
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
Leatech Electronics GmbHTP65H050WSQA.pdf
Description:
GANFET N-CH 650V 36A TO247-3
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Manufacturer:
Transphorm
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1000 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
Category:
FETs, MOSFETs

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