Toshiba Semiconductor and Storage TW083N65C,S1F

TW083N65C,S1F
Part No.:
TW083N65C,S1F
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
Leatech Electronics GmbHTW083N65C,S1F.pdf
Description:
G3 650V SIC-MOSFET TO-247 83MOH
Quantity:

Unit Price:$0

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Inventory:142

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Product Details

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Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
18V
Rds On (Max) @ Id, Vgs:
113mOhm @ 15A, 18V
Vgs(th) (Max) @ Id:
5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 18 V
Vgs (Max):
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
873 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
111W (Tc)
Operating Temperature:
175°C
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Category:
FETs, MOSFETs

1. How to order TW083N65C,S1F on Leatech Electronics GmbH?

Currently, Leatech Electronics GmbH only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Leatech Electronics GmbH guarantee that TW083N65C,S1F is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the TW083N65C,S1F. All suppliers must pass our qualification reviews before they can publish their products including TW083N65C,S1F on Leatech Electronics GmbH; we pay more attention to the channels and quality of TW083N65C,S1F products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the TW083N65C,S1F price and inventory displayed accurate?

The price and inventory of TW083N65C,S1F fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of TW083N65C,S1F?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TW083N65C,S1F we delivered, we will accept the replacement or return of the TW083N65C,S1F only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TW083N65C,S1F.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as TW083N65C,S1F pin diagram, TW083N65C,S1F datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image TW015N120C,S1F TW083N65C,S1F TW048Z65C,S1F TW030Z120C,S1F TW015Z120C,S1F
Part Number TW015N120C,S1F TW083N65C,S1F TW048Z65C,S1F TW030Z120C,S1F TW015Z120C,S1F
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Series - - - - -
Package/Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Packaging Tube Tube Tube Tube Tube
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc) 30A (Tc) 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V 18V 18V 18V 18V
Rds On (Max) @ Id, Vgs 113mOhm @ 15A, 18V 113mOhm @ 15A, 18V 113mOhm @ 15A, 18V 113mOhm @ 15A, 18V 113mOhm @ 15A, 18V
Vgs(th) (Max) @ Id 5V @ 600µA 5V @ 600µA 5V @ 600µA 5V @ 600µA 5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 18 V 28 nC @ 18 V 28 nC @ 18 V 28 nC @ 18 V 28 nC @ 18 V
Vgs (Max) +25V, -10V +25V, -10V +25V, -10V +25V, -10V +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 873 pF @ 400 V 873 pF @ 400 V 873 pF @ 400 V 873 pF @ 400 V 873 pF @ 400 V
FET Feature - - - - -
Power Dissipation (Max) 111W (Tc) 111W (Tc) 111W (Tc) 111W (Tc) 111W (Tc)
Operating Temperature 175°C 175°C 175°C 175°C 175°C
Grade - - - - -
Qualification - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247 TO-247 TO-247 TO-247 TO-247

TW083N65C,S1F Relevant Information

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