Qorvo UHB50SC12E1BC3N

UHB50SC12E1BC3N
Part No.:
UHB50SC12E1BC3N
Manufacturer:
Qorvo
Category:
FET, MOSFET Arrays
Package:
Module
Datasheet:
Leatech Electronics GmbHUHB50SC12E1BC3N.pdf
Description:
MOSFET 2P-CH 1200V 69A MODULE
Quantity:

Unit Price:$0

Ext Price:$0

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Inventory:0

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Product attributes
Attribute value
Manufacturer:
Qorvo
Series:
-
Package/Case:
Module
Packaging:
Bulk
Product Status:
Active
Technology:
SiCFET (Silicon Carbide)
Configuration:
2 P-Channel (Half Bridge)
FET Feature:
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
69A (Tj)
Rds On (Max) @ Id, Vgs:
24mOhm @ 50A, 12V
Vgs(th) (Max) @ Id:
6V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:
85nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:
2930pF @ 800V
Power - Max:
208W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
Module
Category:
FET, MOSFET Arrays

1. How to order UHB50SC12E1BC3N on Leatech Electronics GmbH?

Currently, Leatech Electronics GmbH only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Leatech Electronics GmbH guarantee that UHB50SC12E1BC3N is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the UHB50SC12E1BC3N. All suppliers must pass our qualification reviews before they can publish their products including UHB50SC12E1BC3N on Leatech Electronics GmbH; we pay more attention to the channels and quality of UHB50SC12E1BC3N products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the UHB50SC12E1BC3N price and inventory displayed accurate?

The price and inventory of UHB50SC12E1BC3N fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of UHB50SC12E1BC3N?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the UHB50SC12E1BC3N we delivered, we will accept the replacement or return of the UHB50SC12E1BC3N only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of UHB50SC12E1BC3N.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as UHB50SC12E1BC3N pin diagram, UHB50SC12E1BC3N datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image UHB50SC12E1BC3N UHB100SC12E1BC3N
Part Number UHB50SC12E1BC3N UHB100SC12E1BC3N
Manufacturer Qorvo Qorvo
Series - -
Package/Case Module Module
Packaging Bulk Bulk
Product Status Active Active
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Configuration 2 P-Channel (Half Bridge) 2 P-Channel (Half Bridge)
FET Feature Silicon Carbide (SiC) Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 69A (Tj) 69A (Tj)
Rds On (Max) @ Id, Vgs 24mOhm @ 50A, 12V 24mOhm @ 50A, 12V
Vgs(th) (Max) @ Id 6V @ 20mA 6V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 85nC @ 15V 85nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 2930pF @ 800V 2930pF @ 800V
Power - Max 208W (Tc) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package Module Module

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