Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HERAF1005GH50NS, 10A, 400V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 400 V | 10A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 80pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF808GH80NS, 8A, 1000V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 1000 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF807GH80NS, 8A, 800V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 800 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 800 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF806GH80NS, 8A, 600V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF804GH50NS, 8A, 300V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
999 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 300 V | 8A | 1 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | 80pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
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SFAF808GH35NS, 8A, 600V, SUPER FAST RECOV Taiwan Semiconductor Corporation |
996 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF1004GH50NS, 10A, 300V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
990 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 300 V | 10A | 1 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | 80pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
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SFAF808GDIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
920 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF1007GDIODE GEN PURP 800V 10A ITO220AC Taiwan Semiconductor Corporation |
450 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 800 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 800 V | 60pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERA804GDIODE GEN PURP 300V 8A TO220AC Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 | Tube | Active | Standard | 300 V | 8A | 1 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | 65pF @ 4V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 150°C |