Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MBRAD2060H20A, 60V, SCHOTTKY RECTIFIER Taiwan Semiconductor Corporation |
4,461 |
|
![]() Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Schottky | 60 V | 20A | 750 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | 750pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | ThinDPAK | -55°C ~ 150°C |
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TPMR10G35NS, 10A, 400V, SUPER FAST RECO Taiwan Semiconductor Corporation |
10,339 |
|
![]() Datasheet |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Standard | 400 V | 10A | 1.2 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | 140pF @ 4V, 1MHz | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 175°C |
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HERAF807GDIODE GEN PURP 800V 8A ITO220AC Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 800 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 800 V | 60pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF805GDIODE GEN PURP 400V 8A ITO220AC Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 400 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 80pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF806GDIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF804GDIODE GEN PURP 300V 8A ITO220AC Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 300 V | 8A | 1 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | 80pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF1006GDIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF1005GDIODE GEN PURP 400V 10A ITO220AC Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 400 V | 10A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 80pF @ 4V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF1006GH80NS, 10A, 600V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 600 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |
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HERAF805GH50NS, 8A, 400V, HIGH EFFICIENT R Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Active | Standard | 400 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | 80pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -55°C ~ 150°C |