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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK5A60W5,S5VXPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Ta) | 10V | 950mOhm @ 2.3A, 10V | 4.5V @ 230µA | 11.5 nC @ 10 V | ±30V | 370 pF @ 300 V | - | 30W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK8A50DA(STA4,Q,M)MOSFET N-CH 500V 7.5A TO220SIS Toshiba Semiconductor and Storage |
3 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.5A (Ta) | 10V | 1.04Ohm @ 3.8A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK10A50D(STA4,Q,M)MOSFET N-CH 500V 10A TO220SIS Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Ta) | 10V | 720mOhm @ 5A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK6A65W,S5XMOSFET N-CH 650V 5.8A TO220SIS Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5.8A (Ta) | 10V | 1Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TPHR7404PU,L1Q(M40V UMOS9 S 0.65MOHM SOP-ADV(N) Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 6V, 10V | 0.74mOhm @ 50A, 10V | 3V @ 1mA | 98 nC @ 10 V | ±20V | 9000 pF @ 20 V | - | 3W (Ta), 210W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TK7A65W,S5XMOSFET N-CH 650V 6.8A TO220SIS Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6.8A (Ta) | 10V | 780mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK25A20D,S5XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
11 | - |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 25A (Ta) | 10V | 70mOhm @ 12.5A, 10V | 3.5V @ 1mA | 60 nC @ 10 V | ±20V | 2550 pF @ 100 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK11A55D(STA4,Q,M)MOSFET N-CH 550V 11A TO220SIS Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 11A (Ta) | 10V | 630mOhm @ 5.5A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK19A50W,S5XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 18.5A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 40W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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XPHR7904PS,L1XHQ40V UMOS9-H SOP ADVANCE Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Ta) | 6V, 10V | 0.79mOhm @ 75A, 10V | 3V @ 1mA | 85 nC @ 10 V | ±20V | 6650 pF @ 10 V | - | 3W (Ta), 170W (Tc) | 175°C | Automotive | AEC-Q101 | Surface Mount | 8-SOP Advance (5x5) |
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