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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK35A65W,S5XMOSFET N-CH 650V 35A TO220SIS Toshiba Semiconductor and Storage |
13 | - |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Ta) | 10V | 80mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK39N60X,S1FMOSFET N-CH 600V 38.8A TO247 Toshiba Semiconductor and Storage |
14 | - |
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Datasheet |
DTMOSIV-H | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38.8A (Ta) | 10V | 65mOhm @ 12.5A, 10V | 3.5V @ 1.9mA | 85 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK35N65W,S1FMOSFET N-CH 650V 35A TO247 Toshiba Semiconductor and Storage |
5 | - |
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Datasheet |
DTMOSIV | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Ta) | 10V | 80mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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TK62J60W,S1VQMOSFET N-CH 600V 61.8A TO3P Toshiba Semiconductor and Storage |
2 | - |
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Datasheet |
DTMOSIV | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61.8A (Ta) | 10V | 38mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
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TPC8134,LQ(SMOSFET P-CH 40V 5A 8SOP Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
U-MOSVI | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 5A (Ta) | 4.5V, 10V | 52mOhm @ 2.5A, 10V | 2V @ 100µA | 20 nC @ 10 V | +20V, -25V | 890 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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TK2Q60D(Q)MOSFET N-CH 600V 2A PW-MOLD2 Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
π-MOSVII | TO-251-3 Stub Leads, IPAK | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 4.3Ohm @ 1A, 10V | 4.4V @ 1mA | 7 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | - | - | Through Hole | PW-MOLD2 |
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TPH2R903PL,L1QPB-FPOWERMOSFETTRANSISTORSOP8-AD Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
U-MOSIX-H | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 2.9mOhm @ 35A, 10V | 2.1V @ 200µA | 26 nC @ 10 V | ±20V | 2300 pF @ 15 V | - | 960mW (Ta), 81W (Tc) | 175°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TK3A65DA(STA4,QM)MOSFET N-CH 650V 2.5A TO220SIS Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 2.5A (Ta) | 10V | 2.51Ohm @ 1.3A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK8R2E06PL,S1XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
U-MOSIX-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 8.2mOhm @ 25A, 10V | 2.5V @ 300µA | 28 nC @ 10 V | ±20V | 1990 pF @ 30 V | - | 81W (Tc) | 175°C | - | - | Through Hole | TO-220 |
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TK5A65W,S5XMOSFET N-CH 650V 5.2A TO220SIS Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5.2A (Ta) | 10V | 1.2Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 30W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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