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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SUP53P06-20-GE3MOSFET P-CH 60V 9.2A/53A TO220AB Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 9.2A (Ta), 53A (Tc) | 4.5V, 10V | 19.5mOhm @ 30A, 10V | 3V @ 250µA | 115 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 3.1W (Ta), 104.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRLZ14LMOSFET N-CH 60V 10A TO262-3 Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Tc) | 4V, 5V | 200mOhm @ 6A, 5V | 2V @ 250µA | 8.4 nC @ 5 V | ±10V | 400 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262-3 |
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SIHB6N80E-GE3MOSFET N-CH 800V 5.4A D2PAK Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 827 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFD210MOSFET N-CH 200V 600MA 4DIP Vishay Siliconix |
0 | - |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 600mA (Ta) | 10V | 1.5Ohm @ 360mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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IRFR110MOSFET N-CH 100V 4.3A DPAK Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFR210TRMOSFET N-CH 200V 2.6A DPAK Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFD010MOSFET N-CH 50V 1.7A 4DIP Vishay Siliconix |
0 | - |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 1.7A (Tc) | 10V | 200mOhm @ 860mA, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 250 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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IRFD014MOSFET N-CH 60V 1.7A 4DIP Vishay Siliconix |
0 | - |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.7A (Ta) | 10V | 200mOhm @ 1A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 310 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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IRFD9014MOSFET P-CH 60V 1.1A 4DIP Vishay Siliconix |
0 | - |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.1A (Ta) | 10V | 500mOhm @ 660mA, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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IRFR110TRMOSFET N-CH 100V 4.3A DPAK Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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