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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHG125N65E-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SIHK100N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
0 | - |
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Datasheet |
E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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SIHP100N65E-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHB100N65E-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHH100N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
0 | - |
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Datasheet |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
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MXP120A080FL-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
0 | - |
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Datasheet |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MXP120A045FW-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
0 | - |
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Datasheet |
MaxSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 49A (Tc) | 18V, 20V | 56mOhm @ 20A, 20V | 2.38V @ 5mA | 75.6 nC @ 18 V | +22V, -10V | 1958 pF @ 800 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3L |
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MXP120A045FL-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
0 | - |
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Datasheet |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SIS822DNT-T1-GE3MOSFET N-CH 30V 12A PPAK1212-8 Vishay Siliconix |
0 | - |
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Datasheet |
- | PowerPAK® 1212-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Tc) | 4.5V, 10V | 24mOhm @ 7.8A, 10V | 2.5V @ 250µA | 12 nC @ 10 V | ±20V | 435 pF @ 15 V | - | 15.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SI2302ADS-T1-GE3MOSFET N-CH 20V 2.1A SOT23-3 Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.1A (Ta) | 2.5V, 4.5V | 60mOhm @ 3.6A, 4.5V | 1.2V @ 50µA | 10 nC @ 4.5 V | ±8V | 300 pF @ 10 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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