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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIRS5700DP-T1-RE3N-CHANNEL MOSFET Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 25A (Ta), 144A (Tc) | 7.5V, 10V | 5.6mOhm @ 20A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 5455 pF @ 75 V | - | 8.3W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIJH400E-T1-GE3N-CHANNEL 40 V (D-S) 175 C MOSFE Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® Gen IV | PowerPAK® 8 x 8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 57A (Ta), 608A (Tc) | 4.5V, 10V | 0.52mOhm @ 20A, 10V | 2.4V @ 250µA | 330 nC @ 10 V | +20V, -16V | 15050 pF @ 20 V | - | 3.3W (Ta), 385W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
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SIJK5100E-T1-GE3N-CHANNEL 100 V (D-S) MOSFET Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 74A (Ta), 417A (Tc) | 7.5V, 10V | 1.4mOhm @ 80A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 11480 pF @ 50 V | - | 17W (Ta), 536W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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MXP120A250FW-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
0 | - |
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Datasheet |
MaxSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10.5A (Tc) | 18V, 20V | 313mOhm @ 4A, 20V | 3.1V @ 10mA | 20.3 nC @ 18 V | +22V, -10V | 447 pF @ 800 V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3L |
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SIHP125N65E-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHB125N65E-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SIHH125N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
0 | - |
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Datasheet |
E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
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SIHK125N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- Vishay Siliconix |
0 | - |
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Datasheet |
E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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MXP120A250FL-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
0 | - |
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Datasheet |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SIHG70N60EF-GE3MOSFET N-CH 600V 70A TO247AC Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 250µA | 380 nC @ 10 V | ±30V | 7500 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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