Toshiba Semiconductor and Storage TK39N60W,S1VF

TK39N60W,S1VF
Part No.:
TK39N60W,S1VF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
Leatech Electronics GmbHTK39N60W,S1VF.pdf
Description:
MOSFET N CH 600V 38.8A TO247
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Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
DTMOSIV
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id:
3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
4100 pF @ 300 V
FET Feature:
-
Power Dissipation (Max):
270W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247
Category:
FETs, MOSFETs

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