Goford Semiconductor G2K2P10D3E

G2K2P10D3E
Part No.:
G2K2P10D3E
Manufacturer:
Goford Semiconductor
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
Leatech Electronics GmbHG2K2P10D3E.pdf
Description:
MOSFET P-CH ESD 100V 10A DFN3*3-
Quantity:

Unit Price:$0

Ext Price:$0

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Inventory:352

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Product Details

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Product attributes
Attribute value
Manufacturer:
Goford Semiconductor
Series:
TrenchFET®
Package/Case:
8-PowerVDFN
Packaging:
Cut Tape (CT)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
210mOhm @ -6A, -10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1668 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
31W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (3.15x3.05)
Category:
FETs, MOSFETs

1. How to order G2K2P10D3E on Leatech Electronics GmbH?

Currently, Leatech Electronics GmbH only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Leatech Electronics GmbH guarantee that G2K2P10D3E is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the G2K2P10D3E. All suppliers must pass our qualification reviews before they can publish their products including G2K2P10D3E on Leatech Electronics GmbH; we pay more attention to the channels and quality of G2K2P10D3E products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the G2K2P10D3E price and inventory displayed accurate?

The price and inventory of G2K2P10D3E fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of G2K2P10D3E?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the G2K2P10D3E we delivered, we will accept the replacement or return of the G2K2P10D3E only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G2K2P10D3E.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as G2K2P10D3E pin diagram, G2K2P10D3E datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image G3035 G2312 3401 G02P06 GT6K2P10IH
Part Number G3035 G2312 3401 G02P06 GT6K2P10IH
Manufacturer Goford Semiconductor Goford Semiconductor Goford Semiconductor Goford Semiconductor Goford Semiconductor
Series TrenchFET® TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Package/Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Packaging Cut Tape (CT) Cut Tape (CT) Cut Tape (CT) Cut Tape (CT) Cut Tape (CT)
Product Status Active Active Active Active Active
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc) 10A (Tc) 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 210mOhm @ -6A, -10V 210mOhm @ -6A, -10V 210mOhm @ -6A, -10V 210mOhm @ -6A, -10V 210mOhm @ -6A, -10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V 33 nC @ 10 V 33 nC @ 10 V 33 nC @ 10 V 33 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1668 pF @ 50 V 1668 pF @ 50 V 1668 pF @ 50 V 1668 pF @ 50 V 1668 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 31W (Tc) 31W (Tc) 31W (Tc) 31W (Tc) 31W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - - - - -
Qualification - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-DFN (3.15x3.05) 8-DFN (3.15x3.05) 8-DFN (3.15x3.05) 8-DFN (3.15x3.05) 8-DFN (3.15x3.05)

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