Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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CDBZ5T1045-HFDIODE SCHOTTKY 45V 10A SMC Comchip Technology |
263 |
|
![]() Datasheet |
- | Z5-T | Tape & Reel (TR) | Obsolete | Schottky | 45 V | 10A | 550 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | - | - | - | Surface Mount | SMC (Z5-T) | -55°C ~ 150°C |
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CDBJFSC5650-GDIODE SIL CARBIDE 650V 5A TO220F Comchip Technology |
346 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 430pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
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CDBD2SC21200-GDIODE SIL CARB 1.2KV 6.2A TO263 Comchip Technology |
381 |
|
![]() Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 6.2A | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 136pF @ 0V, 1MHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
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CDBDSC8650-GDIODE SIL CARB 650V 25.5A DPAK Comchip Technology |
342 |
|
![]() Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 25.5A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 550pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
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CDBJFSC8650-GDIODE SIL CARBIDE 650V 8A TO220F Comchip Technology |
479 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 560pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
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CDBJSC10650-GDIODE SIL CARB 650V 10A TO220F Comchip Technology |
472 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 710pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
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CDBDSC10650-GDIODE SIL CARBIDE 650V 10A DPAK Comchip Technology |
355 |
|
![]() Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 690pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
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CDBJFSC101200-GDIODE SIL CARB 1.2KV 10A TO220F Comchip Technology |
553 |
|
![]() Datasheet |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
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CDBDSC51200-GDIODE SIL CARBIDE 1.2KV 18A DPAK Comchip Technology |
411 |
|
![]() Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 18A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 475pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
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CDBFR03100-HFDIODE SCHOTTKY 100V 300MA 1005 Comchip Technology |
1,424 |
|
![]() Datasheet |
- | 1005 (2512 Metric) | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 300mA | 820 mV @ 300 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | 25pF @ 1V, 1MHz | - | - | Surface Mount | 1005/SOD-323F | -40°C ~ 150°C |