Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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2A07GHA0GDIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation |
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![]() Datasheet |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 2A | 1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
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3A100HA0GDIODE GEN PURP 3A DO204AC Taiwan Semiconductor Corporation |
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![]() Datasheet |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 3A | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 27pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
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3A60HA0GDIODE GEN PURP 600V 3A DO204AC Taiwan Semiconductor Corporation |
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![]() Datasheet |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 600 V | 3A | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | 27pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
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6A100G A0GDIODE GEN PURP 1KV 6A R-6 Taiwan Semiconductor Corporation |
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![]() Datasheet |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | - | - | Through Hole | R-6 | -55°C ~ 150°C |
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6A10G A0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
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![]() Datasheet |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 100 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | 60pF @ 4V, 1MHz | - | - | Through Hole | R-6 | -55°C ~ 150°C |
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6A10GHA0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
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![]() Datasheet |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 100 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | R-6 | -55°C ~ 150°C |
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6A40G A0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
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![]() Datasheet |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 400 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | 60pF @ 4V, 1MHz | - | - | Through Hole | R-6 | -55°C ~ 150°C |
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6A40GHA0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
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![]() Datasheet |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 400 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | 60pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | R-6 | -55°C ~ 150°C |
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6A60G A0GDIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation |
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![]() Datasheet |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 600 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | 60pF @ 4V, 1MHz | - | - | Through Hole | R-6 | -55°C ~ 150°C |
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6A80G A0GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
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![]() Datasheet |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 800 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 60pF @ 4V, 1MHz | - | - | Through Hole | R-6 | -55°C ~ 150°C |