Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HERA808GH80NS, 8A, 1000V, HIGH EFFICIENT Taiwan Semiconductor Corporation |
1,000 |
|
![]() Datasheet |
- | TO-220-2 | Tube | Active | Standard | 1000 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 1000 V | 55pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -55°C ~ 150°C |
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SF64GHDIODE GEN PURP 200V 6A DO201AD Taiwan Semiconductor Corporation |
1,153 |
|
![]() Datasheet |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 6A | 975 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 100pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
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MBRAD20200H20A, 200V, SCHOTTKY RECTIFIER Taiwan Semiconductor Corporation |
3,204 |
|
![]() Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Schottky | 200 V | 20A | 950 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 200 V | 295pF @ 4V, 1MHz | Automotive | AEC-Q101 | Surface Mount | ThinDPAK | -55°C ~ 150°C |
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TUAS8KDIODE GEN PURP 800V 8A SMPC4.6U Taiwan Semiconductor Corporation |
1,179 |
|
![]() Datasheet |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Standard | 800 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 54pF @ 4V, 1MHz | - | - | Surface Mount | SMPC4.6U | -55°C ~ 150°C |
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SF68GHDIODE GEN PURP 600V 6A DO201AD Taiwan Semiconductor Corporation |
2,466 |
|
![]() Datasheet |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 6A | 1.7 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 50pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
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SF65GHDIODE GEN PURP 300V 6A DO201AD Taiwan Semiconductor Corporation |
2,450 |
|
![]() Datasheet |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 300 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 300 V | 50pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
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SF65GDIODE GEN PURP 300V 6A DO201AD Taiwan Semiconductor Corporation |
2,404 |
|
![]() Datasheet |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 300 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 300 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
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SF66GDIODE GEN PURP 400V 6A DO201AD Taiwan Semiconductor Corporation |
2,357 |
|
![]() Datasheet |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
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SF66GHDIODE GEN PURP 400V 6A DO201AD Taiwan Semiconductor Corporation |
2,240 |
|
![]() Datasheet |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 50pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
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MUR840DIODE GEN PURP 400V 8A TO220AC Taiwan Semiconductor Corporation |
998 |
|
![]() Datasheet |
- | TO-220-2 | Tube | Active | Standard | 400 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |