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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AUIRF1404STRLMOSFET_(20V,40V) |
800 |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
BTS114AE3045ANTMA1POWER FIELD-EFFECT TRANSISTOR, 1 |
12,000 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO220-3-5 |
|
2SK3353-AZ2SK3353 - N-CHANNEL POWER MOSFET |
3,289 |
|
Datasheet |
- | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 82A (Tc) | 4V, 10V | 9.5mOhm @ 41A, 10V | 2.5V @ 1mA | 90 nC @ 10 V | ±20V | 4650 pF @ 10 V | - | 1.5W (Ta), 95W (Tc) | 150°C | - | - | Through Hole | TO-220AB |
|
RJK0601DPN-E0#T2RJK0601DPN - N-CHANNEL MOSFET 60 |
1,640 |
|
Datasheet |
- | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Ta) | 10V | 3.1mOhm @ 55A, 10V | 4V @ 1mA | 141 nC @ 10 V | ±20V | 10000 pF @ 10 V | - | 200W (Tc) | 150°C | - | - | Through Hole | TO-220ABS |
|
|
2SK2498-AZ2SK2498 - SWITCHING N-CHANNEL PO |
414 |
|
- |
- | TO-220-3 Full Pack, Isolated Tab | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Ta) | 4V, 10V | 9mOhm @ 25A, 10V | 2V @ 1mA | 152 nC @ 10 V | ±20V | 3400 pF @ 10 V | - | 2W (Ta), 35W (Tc) | 150°C | - | - | Through Hole | ITO-220AB |
|
FCP170N60MOSFET N-CH 600V 22A TO220-3 |
800 |
|
Datasheet |
SuperFET® II | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 170mOhm @ 11A, 10V | 3.5V @ 250µA | 55 nC @ 10 V | ±20V | 2860 pF @ 380 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
IPC313N10N3RX1SA2TRENCH >=100V |
7,784 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
EMB1426QMME/NOPBEMB1426 - HALF BRIDGE BASED MOSF |
500 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
AM90N10-07BMOSFET N-CH 100V 90A TO-263 |
200 |
|
- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 5.5V, 10V | 7mOhm @ 45A, 10V | 1V @ 250µA | 114 nC @ 5.5 V | ±20V | 9235 pF @ 15 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 |
|
|
2SK3354-AZ2SK3354-AZ - SWITCHING N-CHANNEL |
956 |
|
Datasheet |
- | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 83A (Tc) | 4V, 10V | 8mOhm @ 42A, 10V | 2.5V @ 1mA | 106 nC @ 10 V | ±20V | 6300 pF @ 10 V | - | 1.5W (Ta), 100W (Tc) | 150°C | - | - | Through Hole | TO-220AB |
|
FCH25N60NPOWER FIELD-EFFECT TRANSISTOR, 2 |
4,502 |
|
Datasheet |
SupreMOS™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 126mOhm @ 12.5A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±30V | 3352 pF @ 100 V | - | 216W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
FL06250GSICFET N-CH 650V 10.7A PDFN8x8 |
300 |
|
Datasheet |
Lightning | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 10.7A (Tc) | 15V | 330mOhm @ 3A, 15V | 2V @ 6mA | 18.2 nC @ 12 V | 15V | 436 pF @ 400 V | - | 46.8W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 4-PDFN (8x8) |
|
|
RQA0002DNSTB-ERQA0002DNS - N CHANNEL MOSFET |
9,270 |
|
- |
- | 3-DFN Exposed Pad | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 16 V | 3.8A (Ta) | - | - | 750mV @ 1mA | - | ±5V | 102 pF @ 0 V | - | 15W (Tc) | 150°C | - | - | Surface Mount | 2-HWSON (5x4) |
|
|
GPI65008DF68GaNFET N-CH 650V 8A DFN6x8 |
990 |
|
Datasheet |
- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 8A | 6V | - | 1.7V @ 3.5mA | 2.1 nC @ 6 V | +7.5V, -12V | 63 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
|
2SK3357-A2SK3357 - N-CHANNEL POWER MOSFET |
294 |
|
Datasheet |
- | TO-3P-3, SC-65-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Ta) | 4V, 10V | 5.8mOhm @ 38A, 10V | 2.5V @ 1mA | 170 nC @ 10 V | ±20V | 9800 pF @ 10 V | - | 3W (Ta), 150W (Tc) | 150°C | - | - | Through Hole | TO-3P (MP-88) |
|
|
AC3M0120065KSIC MOSFET N-CH 650V 23A TO247-4 |
10,000 |
|
Datasheet |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 23A | 15V | 157mOhm @ 6.76A, 15V | 3.6V @ 1.86mA | - | +19V, -8V | - | - | 98W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
AC3M0075120KSIC MOSFET N-CH 1200V 33A TO247- |
10,000 |
|
Datasheet |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A | 15V | 90mOhm @ 20A, 15V | 3.6V @ 5mA | - | +19V, -8V | - | - | 136W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
AC2M0080120DSIC MOSFET N-CH 1200V 37A TO247- |
10,000 |
|
Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37A | 20V | 98mOhm @ 20A, 20V | 4V @ 5mA | - | +25V, -10V | - | - | 129W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
|
|
AC3M0120065DSIC MOSFET N-CH 650V 23A TO247-3 |
10,000 |
|
Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 23A | 15V | 157mOhm @ 6.76A, 15V | 3.6V @ 1.86mA | - | +19V, -8V | - | - | 98W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
AC3M0120090DSIC MOSFET N-CH 900V 24A TO247-3 |
10,000 |
|
Datasheet |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 24A | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | - | +19V, -8V | - | - | 97W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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