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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RJK60S5DPK-M0#T0MOSFET N-CH 600V 20A TO3PSG |
68,097 |
|
Datasheet |
- | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | 178mOhm @ 10A, 10V | - | 27 nC @ 10 V | - | 1600 pF @ 25 V | - | - | - | - | - | Through Hole | TO-3PSG |
|
RJK60S5DPE-00#J3MOSFET N-CH 600V 20A 4LDPAK |
40,000 |
|
Datasheet |
- | SC-83 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | 178mOhm @ 10A, 10V | - | 27 nC @ 10 V | - | 1600 pF @ 25 V | - | 125W (Tc) | 150°C (TJ) | - | - | Surface Mount | LDPAK |
|
RJK60S5DPP-E0#T2MOSFET N-CH 600V 20A TO220FP |
226 |
|
Datasheet |
- | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | 178mOhm @ 10A, 10V | - | 27 nC @ 10 V | - | 1600 pF @ 25 V | - | 33.7W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FP |
|
C3M0040120J2-TRWOLFSPEED SIC, MOSFET |
589 |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-7 |
|
|
CGD65A055S2-T07650V GAN HEMT, 55MOHM, DFN8X8. W |
674 |
|
Datasheet |
ICeGaN™ | 16-PowerVDFN | Cut Tape (CT) | Active | - | GaNFET (Gallium Nitride) | 650 V | 27A (Tc) | 12V | 77mOhm @ 2.2A, 12V | 4.2V @ 10mA | 6 nC @ 12 V | +20V, -1V | - | Current Sensing | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 16-DFN (8x8) |
|
SCT3080KRC14SICFET N-CH 1200V 31A TO247-4L |
270 |
|
Datasheet |
- | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 165W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
N3T035MP120D1200 V, 76A SIC MOSFET, TO-247 |
652 |
|
Datasheet |
1200 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 76A | 20V | 45mOhm @ 30A, 20V | 3V @ 15mA | 126 nC @ 20 V | +20V, -5V | 2204 pF @ 800 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
|
|
4AM17-91POWER N AND P CHANNEL MOSFETS |
38,812 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
H5N2513PL-EN-CHANNEL POWER MOSFET |
1,189 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
G3R40MT12JSIC MOSFET N-CH 75A TO263-7 |
421 |
|
Datasheet |
G3R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 15V | 48mOhm @ 35A, 15V | 2.7V @ 18mA (Typ) | 106 nC @ 15 V | ±15V | 2929 pF @ 800 V | - | 374W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
FCH085N80-F155MOSFET N-CH 800V 46A TO247 |
437 |
|
Datasheet |
SuperFET® II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 46A (Tc) | 10V | 85mOhm @ 23A, 10V | 4.5V @ 4.6mA | 255 nC @ 10 V | ±20V | 10825 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
NVBGS4D1N15MCMOSFET N-CH 150V 20A/185A D2PAK |
364 |
|
Datasheet |
- | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 20A (Ta), 185A (Tc) | 8V, 10V | 4.1mOhm @ 104A, 10V | 4.5V @ 574µA | 88.9 nC @ 10 V | ±20V | 7285 pF @ 75 V | - | 3.7W (Ta), 316W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
|
|
S3M0025120TMOSFET SILICON CARBIDE SIC 1200V |
200 |
|
Datasheet |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 77A (Tc) | 18V | 32mOhm @ 48A, 18V | 4V @ 20mA | 175 nC @ 18 V | +22V, -8V | 3519 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
|
H5N5011PL-EN-CHANNEL POWER MOSFET |
1,086 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
G2R1000MT33JSIC MOSFET N-CH 4A TO263-7 |
1,853 |
|
Datasheet |
G2R™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.5V @ 2mA | 21 nC @ 20 V | +20V, -5V | 238 pF @ 1000 V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
FCA76N60NMOSFET N-CH 600V 76A TO3PN |
1,348 |
|
Datasheet |
SupreMOS™ | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 36mOhm @ 38A, 10V | 4V @ 250µA | 285 nC @ 10 V | ±30V | 12385 pF @ 100 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
|
|
E3M0045065KSIC, MOSFET, 45M, 650V, TO-247-4 |
359 |
|
Datasheet |
E | TO-247-4 | Tube | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 64 nC @ 15 V | +19V, -8V | 1593 pF @ 400 V | - | 150W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
C3M0032120J2-TRMOSFET N-CH 1200V 68A TO263 |
575 |
|
- |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | - | 3.6V @ 11.5mA | 111 nC @ 15 V | -8V, +19V | 3424 pF @ 1000 V | - | 277W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
4AK17-91N-CHANNEL POWER MOSFET |
29,649 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FF12040J-7SICFET N-CH 1200V 45A TO-263-7L |
278 |
|
Datasheet |
Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 45A (Tc) | 15V, 18V | 56mOhm @ 20A, 18V | 2.5V @ 40mA (Typ) | 117 nC @ 800 V | +18V, -8V | 3129 pF @ 800 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7L |
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