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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPCA8028-H(TE12LQMMOSFET N-CH 30V 50A 8SOP Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
U-MOSIV-H | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Ta) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 2.3V @ 1mA | 88 nC @ 10 V | ±20V | 7800 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-SOP Advance (5x5) |
.JPG)
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2SK3403(Q)MOSFET N-CH 450V 13A TO220FL Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
- | TO-220-3, Short Tab | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 13A (Ta) | 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 34 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 100W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FL |
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TK9P65W,RQMOSFET N-CH 650V 9.3A DPAK Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9.3A (Ta) | 10V | 560mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 80W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK65G10N1,RQMOSFET N-CH 100V 65A D2PAK Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
U-MOSVIII-H | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 65A (Ta) | 10V | 4.5mOhm @ 32.5A, 10V | 4V @ 1mA | 81 nC @ 10 V | ±20V | 5400 pF @ 50 V | - | 156W (Tc) | 150°C (TJ) | - | - | Surface Mount | D2PAK |
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2SK1119(F)MOSFET N-CH 1000V 4A TO220AB Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Ta) | 10V | 3.8Ohm @ 2A, 10V | 3.5V @ 1mA | 60 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 100W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220AB |
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2SK2916(F)MOSFET N-CH 500V 14A TO3PIS Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
- | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Ta) | 10V | 400mOhm @ 7A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±30V | 2600 pF @ 10 V | - | 80W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N)IS |
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2SK3313(Q)MOSFET N-CH 500V 12A TO220NIS Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Ta) | 10V | 620mOhm @ 6A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±30V | 2040 pF @ 10 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220NIS |
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TK12V60W,LVQMOSFET N-CH 600V 11.5A 4DFN Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
DTMOSIV | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 104W (Tc) | 150°C (TJ) | - | - | Surface Mount | 4-DFN-EP (8x8) |
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TK8P60W,RVQMOSFET N CH 600V 8A DPAK Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 80W (Tc) | 150°C (TJ) | - | - | Surface Mount | DPAK |
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TK14G65W5,RQMOSFET N-CH 650V 13.7A D2PAK Toshiba Semiconductor and Storage |
0 | - |
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Datasheet |
DTMOSIV | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | 150°C (TJ) | - | - | Surface Mount | D2PAK |
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