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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK7A55D(STA4,Q,M)MOSFET N-CH 550V 7A TO220SIS Toshiba Semiconductor and Storage |
45 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 7A (Ta) | 10V | 1.25Ohm @ 3.5A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK3A65D(STA4,Q,M)MOSFET N-CH 650V 3A TO220SIS Toshiba Semiconductor and Storage |
26 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 3A (Ta) | 10V | 2.25Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK5A65DA(STA4,Q,M)MOSFET N-CH 650V 4.5A TO220SIS Toshiba Semiconductor and Storage |
32 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.5A (Ta) | 10V | 1.67Ohm @ 2.3A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK5A65D(STA4,Q,M)MOSFET N-CH 650V 5A TO220SIS Toshiba Semiconductor and Storage |
28 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5A (Ta) | 10V | 1.43Ohm @ 2.5A, 10V | 4V @ 1mA | 16 nC @ 10 V | ±30V | 800 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK11A50D(STA4,Q,M)MOSFET N-CH 500V 11A TO220SIS Toshiba Semiconductor and Storage |
50 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Ta) | 10V | 600mOhm @ 5.5A, 10V | 4V @ 1mA | 24 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK56E12N1,S1XMOSFET N CH 120V 56A TO-220 Toshiba Semiconductor and Storage |
52 | - |
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Datasheet |
U-MOSVIII-H | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 56A (Ta) | 10V | 7mOhm @ 28A, 10V | 4V @ 1mA | 69 nC @ 10 V | ±20V | 4200 pF @ 60 V | - | 168W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
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TK8Q65W,S1QMOSFET N-CH 650V 7.8A IPAK Toshiba Semiconductor and Storage |
75 | - |
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Datasheet |
DTMOSIV | TO-251-3 Stub Leads, IPAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.8A (Ta) | 10V | 670mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 80W (Tc) | 150°C (TJ) | - | - | Through Hole | IPAK |
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TK8A55DA(STA4,Q,M)MOSFET N-CH 550V 7.5A TO220SIS Toshiba Semiconductor and Storage |
48 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 7.5A (Ta) | 10V | 1.07Ohm @ 3.8A, 10V | 4V @ 1mA | 16 nC @ 10 V | ±30V | 800 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK18A30D,S5XPB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage |
48 | - |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 18A (Ta) | 10V | 139mOhm @ 9A, 10V | 3.5V @ 1mA | 60 nC @ 10 V | ±20V | 2600 pF @ 100 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK11A45D(STA4,Q,M)MOSFET N-CH 450V 11A TO220SIS Toshiba Semiconductor and Storage |
43 | - |
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Datasheet |
π-MOSVII | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 11A (Ta) | 10V | 620mOhm @ 5.5A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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