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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHK075N60EF-T1GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
1,926 | - |
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Datasheet |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 71mOhm @ 15A, 10V | 5V @ 250µA | 72 nC @ 10 V | ±30V | 2954 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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SIHF074N65E-GE3E SERIES POWER MOSFET TO-220 FUL Vishay Siliconix |
988 | - |
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Datasheet |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 79mOhm @ 15A, 10V | 5V @ 250µA | 80 nC @ 10 V | ±30V | 2904 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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SIHP074N65E-GE3E SERIES POWER MOSFET TO-220AB, Vishay Siliconix |
1,000 | - |
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Datasheet |
E | TO-220-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 79mOhm @ 15A, 10V | 5V @ 250µA | 80 nC @ 10 V | ±30V | 2904 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHG47N65E-GE3MOSFET N-CH 650V 47A TO247AC Vishay Siliconix |
486 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 72mOhm @ 24A, 10V | 4V @ 250µA | 273 nC @ 10 V | ±30V | 5682 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SIHP054N65E-GE3E SERIES POWER MOSFET TO-220AB, Vishay Siliconix |
1,037 | - |
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Datasheet |
E | TO-220-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 58mOhm @ 20A, 10V | 5V @ 250µA | 108 nC @ 20 V | ±30V | 3769 pF @ 100 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHK055N60EF-T1GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
2,040 | - |
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Datasheet |
EF | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 58mOhm @ 16A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±30V | 3667 pF @ 100 V | - | 236W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
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MXP120A080FW-GE3SILICON CARBIDE MOSFET Vishay Siliconix |
540 | - |
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Datasheet |
MaxSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 29A (Tc) | 18V, 20V | 100mOhm @ 20A, 20V | 2.69V @ 5mA | 47.3 nC @ 18 V | +22V, -10V | 1156 pF @ 800 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3L |
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SIHG64N65E-GE3MOSFET N-CH 650V 64A TO247AC Vishay Siliconix |
481 | - |
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Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 47mOhm @ 32A, 10V | 4V @ 250µA | 369 nC @ 10 V | ±30V | 7497 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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SI2301BDS-T1-BE3P-CHANNEL 2.5-V (G-S) MOSFET Vishay Siliconix |
3,800 | - |
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Datasheet |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.2A (Ta) | 2.5V, 4.5V | 100mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 10 nC @ 4.5 V | ±8V | 375 pF @ 6 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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SI2301BDS-T1-E3MOSFET P-CH 20V 2.2A SOT23-3 Vishay Siliconix |
3,000 | - |
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Datasheet |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.2A (Ta) | 2.5V, 4.5V | 100mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 10 nC @ 4.5 V | ±8V | 375 pF @ 6 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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