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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHB15N65E-GE3MOSFET N-CH 650V 15A TO263 Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFD9210MOSFET P-CH 200V 400MA 4DIP Vishay Siliconix |
0 | - |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 400mA (Ta) | 10V | 3Ohm @ 240mA, 10V | 4V @ 250µA | 8.9 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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IRLL014MOSFET N-CH 60V 2.7A SOT223 Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.7A (Tc) | 4V, 5V | 200mOhm @ 1.6A, 5V | 2V @ 250µA | 8.4 nC @ 5 V | ±10V | 400 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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IRLL014TRMOSFET N-CH 60V 2.7A SOT223 Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.7A (Tc) | 4V, 5V | 200mOhm @ 1.6A, 5V | 2V @ 250µA | 8.4 nC @ 5 V | ±10V | 400 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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SI7452DP-T1-E3MOSFET N-CH 60V 11.5A PPAK SO-8 Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 11.5A (Ta) | 10V | 8.3mOhm @ 19.3A, 10V | 4.5V @ 250µA | 160 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SI7452DP-T1-GE3MOSFET N-CH 60V 11.5A PPAK SO-8 Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 11.5A (Ta) | 10V | 8.3mOhm @ 19.3A, 10V | 4.5V @ 250µA | 160 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SI7620DN-T1-GE3MOSFET N-CH 150V 13A PPAK1212-8 Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 126mOhm @ 3.6A, 10V | 4.5V @ 250µA | 15 nC @ 10 V | ±20V | 600 pF @ 75 V | - | 3.8W (Ta), 5.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SIHP22N60S-E3MOSFET N-CH 600V 22A TO220AB Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | - | 190mOhm @ 11A, 10V | 4V @ 250µA | 110 nC @ 10 V | - | 2810 pF @ 25 V | - | - | - | - | - | Through Hole | TO-220AB |
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SIHA22N60AE-E3MOSFET N-CHANNEL 600V 20A TO220 Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1451 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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IRF830BPBF-BE3MOSFET N-CH 500V 5.3A TO220AB Vishay Siliconix |
11 | - |
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Datasheet |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5.3A (Tc) | - | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±30V | 325 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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