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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHP24N65E-E3MOSFET N-CH 650V 24A TO220AB Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIHP24N65E-GE3MOSFET N-CH 650V 24A TO220AB Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2740 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SI7636DP-T1-E3MOSFET N-CH 30V 17A PPAK SO-8 Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta) | 4.5V, 10V | 4mOhm @ 25A, 10V | 3V @ 250µA | 50 nC @ 4.5 V | ±20V | 5600 pF @ 15 V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SI4430BDY-T1-GE3MOSFET N-CH 30V 14A 8SO Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 3V @ 250µA | 36 nC @ 4.5 V | ±20V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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SQR40020ER_GE3MOSFET N-CH 40V 100A TO252 REV Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® | TO-252-4, DPAK (3 Leads + Tab) | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.33mOhm @ 20A, 10V | 3.5V @ 250µA | 130 nC @ 10 V | ±20V | 8000 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252 (DPAK) Reverse Lead |
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IRF820STRLPBFMOSFET N-CH 500V 2.5A D2PAK Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SQJ180EP-T1_GE3AUTOMOTIVE N-CHANNEL 80 V (D-S) Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 248A (Tc) | 10V | 3mOhm @ 15A, 10V | 3.5V @ 250µA | 117 nC @ 10 V | ±20V | 6645 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SIHD9N60E-GE3MOSFET N-CH 600V 9A DPAK Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 368mOhm @ 4.5A, 10V | 4.5V @ 250µA | 52 nC @ 10 V | ±30V | 778 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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SIHP30N60E-GE3MOSFET N-CH 600V 29A TO220AB Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | - |
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SIHB24N65EF-GE3MOSFET N-CH 650V 24A D2PAK Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2774 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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