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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHG15N60E-GE3MOSFET N-CH 600V 15A TO247AC Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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IRFSL11N50APBFMOSFET N-CH 500V 11A TO262-3 Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 550mOhm @ 6.6A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±30V | 1426 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262-3 |
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SIHD1K4N60E-GE3MOSFET N-CH 600V 4.2A TO252AA Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.2A (Tc) | 10V | 1.45Ohm @ 500mA, 10V | 5V @ 250µA | 7.5 nC @ 10 V | ±30V | 172 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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SISS12DN-T1-GE3MOSFET N-CH 40V 37.5A/60A PPAK Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 37.5A (Ta), 60A (Tc) | 4.5V, 10V | 1.98mOhm @ 10A, 10V | 2.4V @ 250µA | 89 nC @ 10 V | +20V, -16V | 4270 pF @ 20 V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
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SIHA22N60E-E3MOSFET N-CH 600V 21A TO220 Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
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SI3430DV-T1-GE3MOSFET N-CH 100V 1.8A 6TSOP Vishay Siliconix |
0 | - |
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Datasheet |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.8A (Ta) | 6V, 10V | 170mOhm @ 2.4A, 10V | 2V @ 250µA (Min) | 6.6 nC @ 10 V | ±20V | - | - | 1.14W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSOP |
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SIHP21N60EF-GE3MOSFET N-CH 600V 21A TO220AB Vishay Siliconix |
0 | - |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 2030 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SIJ150DP-T1-GE3MOSFET N-CH 45V 30.9A/110A PPAK Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 30.9A (Ta), 110A (Tc) | 4.5V, 10V | 2.83mOhm @ 15A, 10V | 2.3V @ 250µA | 70 nC @ 10 V | +20V, -16V | 4000 pF @ 20 V | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIHP22N60E-GE3MOSFET N-CH 600V 21A TO220AB Vishay Siliconix |
0 | - |
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Datasheet |
E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | - |
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SUD50N04-8M8P-4BE3MOSFET N-CH 40V 14A/50A DPAK Vishay Siliconix |
0 | - |
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Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta), 50A (Tc) | 4.5V, 10V | 8.8mOhm @ 20A, 10V | 3V @ 250µA | 56 nC @ 10 V | ±20V | 2400 pF @ 20 V | - | 3.1W (Ta), 48.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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