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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI5476DU-T1-GE3MOSFET N-CH 60V 12A CHIPFET Vishay Siliconix |
5,739 | - |
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Datasheet |
TrenchFET® | PowerPAK® ChipFET™ Single | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 34mOhm @ 4.6A, 10V | 3V @ 250µA | 32 nC @ 10 V | ±20V | 1100 pF @ 30 V | - | 3.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® ChipFET™ Single |
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SQD50N04-5M6L_GE3MOSFET N-CH 40V 50A TO252AA Vishay Siliconix |
4,111 | - |
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Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 2.5V @ 250µA | 75 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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SQJA76EP-T1_BE3N-CHANNEL 40-V (D-S) 175C MOSFET Vishay Siliconix |
2,992 | - |
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Datasheet |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 2.4mOhm @ 10A, 10V | 3.5V @ 250µA | 100 nC @ 10 V | ±20V | 5250 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SIRC16DP-T1-RE3N-CHANNEL 25-V (D-S) MOSFET W/SC Vishay Siliconix |
5,880 | - |
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Datasheet |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 57A (Ta), 60A (Tc) | 4.5V, 10V | 0.96mOhm @ 15A, 10V | 2.4V @ 250µA | 105 nC @ 10 V | +20V, -16V | 5150 pF @ 10 V | Schottky Diode (Body) | 5W (Ta), 54.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQ4850EY-T1_GE3MOSFET N-CH 60V 12A 8SO Vishay Siliconix |
21,818 | - |
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Datasheet |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 22mOhm @ 6A, 5V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 6.8W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-SOIC |
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SIJ450DP-T1-GE3N-CHANNEL 45 V (D-S) MOSFET POWE Vishay Siliconix |
6,000 | - |
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Datasheet |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 36A (Ta), 113A (Tc) | 4.5V, 10V | 1.9mOhm @ 10A, 10V | 2.3V @ 250µA | 114 nC @ 10 V | +20V, -16V | 5920 pF @ 20 V | - | 4.8W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRFD9014PBFMOSFET P-CH 60V 1.1A 4DIP Vishay Siliconix |
5,876 | - |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.1A (Ta) | 10V | 500mOhm @ 660mA, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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IRFD210PBFMOSFET N-CH 200V 600MA 4DIP Vishay Siliconix |
4,751 | - |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 600mA (Ta) | 10V | 1.5Ohm @ 360mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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IRFD123PBFMOSFET N-CH 100V 1.3A 4DIP Vishay Siliconix |
3,184 | - |
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Datasheet |
- | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.3A (Ta) | 10V | 270mOhm @ 780mA, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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IRFU214PBFMOSFET N-CH 250V 2.2A TO251AA Vishay Siliconix |
2,855 | - |
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Datasheet |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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