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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GC11N65D5N650V, 11A,RD<360M@10V,VTH2.5V~4 Goford Semiconductor |
4,942 | - |
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Datasheet |
SuperJunction | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 901 pF @ 50 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT025N06AMN60V,170A,RD<2.5M@10V,VTH1.2V~2. Goford Semiconductor |
776 | - |
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Datasheet |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | ±20V | 5119 pF @ 30 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT011N03MEMOSFET N-CH ESD 30V A TO-263 Goford Semiconductor |
789 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 209A (Tc) | 4.5V, 10V | 1.6mOhm @ 10A, 10V | 2.5V @ 250µA | 98 nC @ 10 V | ±18V | 6140 pF @ 15 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GC11N65MN650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor |
775 | - |
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Datasheet |
SuperJunction | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 768 pF @ 50 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT025N06AD5N60V, 170A, RD<2.2M@10V,VTH1.2V~ Goford Semiconductor |
4,141 | - |
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Datasheet |
SGT | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.5V @ 250µA | 81 nC @ 10 V | ±20V | 5044 pF @ 30 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT025N06D5N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Goford Semiconductor |
7,056 | - |
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Datasheet |
SGT | 8-PowerTDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.5V @ 250µA | 81 nC @ 10 V | ±20V | 5125 pF @ 30 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT045N10MN100V, 120A,RD<4.5M@10V,VTH2V~4V Goford Semiconductor |
609 | - |
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Datasheet |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 4.5mOhm @ 30A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 4198 pF @ 50 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT045N10D5MOSFET N-CH 100V 120A DFN5*6-8L Goford Semiconductor |
4,517 | - |
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Datasheet |
- | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 5mOhm @ 30A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 4217 pF @ 50 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G030N06MMOSFET N-CH 60V 223A TO-263 Goford Semiconductor |
770 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 223A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2.5V @ 250µA | 101 nC @ 4.5 V | ±20V | 12432 pF @ 30 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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G080P06MP-60V,-195A,RD(MAX)<7.5M@-10V,VT Goford Semiconductor |
699 | - |
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Datasheet |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 7.5mOhm @ 20A, 10V | 4V @ 250µA | 186 nC @ 10 V | ±20V | 15870 pF @ 30 V | - | 294W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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