制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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25P06P60V,RD(MAX)<45M@-10V,VTH2V~3V T Goford Semiconductor |
3,714 | - |
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![]() Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 10V | 32mOhm @ 12A, 10V | 3V @ 250µA | 37 nC @ 10 V | ±20V | 2527 pF @ 30 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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45P40P40V,RD(MAX)<14M@-10V,VTH2V~3V T Goford Semiconductor |
8,281 | - |
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![]() Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 45A (Tc) | 10V | 14mOhm @ 20A, 10V | 2.5V @ 250µA | 42 nC @ 10 V | ±20V | 2960 pF @ 20 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G20P10KEP-CH, -100V, 20A, RD(MAX)<116M@- Goford Semiconductor |
2,433 | - |
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![]() Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 10V | 116mOhm @ 16A, 10V | 3V @ 250µA | 70 nC @ 10 V | ±20V | 3354 pF @ 50 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G75P04SMOSFET, P-CH,-40V,-11A,RD(MAX)<8 Goford Semiconductor |
1,910 | - |
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![]() Datasheet |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 20A (Tc) | 4.5V, 10V | 8mOhm @ 10A, 10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 6893 pF @ 20 V | - | 5.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G050P03SP-30V,-25A,RD(MAX)<5.5M@-10V,VTH Goford Semiconductor |
3,994 | - |
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![]() Datasheet |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Tc) | 4.5V, 10V | 5.5mOhm @ 10A, 10V | 2.5V @ 250µA | 111 nC @ 10 V | ±20V | 7221 pF @ 15 V | - | 3.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G130N06MN60V, 90A,RD<12M@10V,VTH1.0V~2.4 Goford Semiconductor |
780 | - |
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![]() Datasheet |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 12mOhm @ 20A, 10V | 2.4V @ 250µA | 36.6 nC @ 10 V | ±20V | 2867 pF @ 30 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT095N10SN100V, 21A,RD<9.5M@10V,VTH1.2V~2 Goford Semiconductor |
3,990 | - |
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SGT | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Tc) | 4.5V, 10V | 10.5mOhm @ 20A, 10V | 2.5V @ 250µA | 54 nC @ 10 V | ±20V | 1628 pF @ 50 V | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G75P04D5MOSFET P-CH 40V 70A DFN5*6-8L Goford Semiconductor |
1,992 | - |
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![]() Datasheet |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 6mOhm @ -20A, -10V | 2.5V @ 250µA | 106 nC @ 10 V | ±20V | 6697 pF @ 20 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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18N20N 200V, RD(MAX)<0.16@10V,VTH1.0V Goford Semiconductor |
1,815 | - |
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![]() Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 3V @ 250µA | 18 nC @ 10 V | ±20V | 847 pF @ 25 V | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G170P06MMOSFET P-CH 60V 65A TO-263 Goford Semiconductor |
638 | - |
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![]() Datasheet |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 17mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 6451 pF @ 30 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |