FET, MOSFET Arrays

制造商 Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
WAS530M12BM3

WAS530M12BM3

MOSFET 2N-CH 1200V 630A

Wolfspeed, Inc.

0
RFQ
WAS530M12BM3

Datasheet

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 630A (Tc) 3.47mOhm @ 530A, 15V 3.6V @ 127mA 1362nC @ 15V 38900pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
MSCSM120AM027D3AG

MSCSM120AM027D3AG

MOSFET 2N-CH 1200V 733A

Microchip Technology

0
RFQ
MSCSM120AM027D3AG

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V 27000pF @ 1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM03T6LIAG

MSCSM120AM03T6LIAG

MOSFET 2N-CH 1200V 805A

Microchip Technology

0
RFQ
MSCSM120AM03T6LIAG

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 805A (Tc) 3.1mOhm @ 400A, 20V 2.8V @ 30mA 2320nC @ 20V 30200pF @ 1000V 3.215kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM02T6LIAG

MSCSM120AM02T6LIAG

MOSFET 2N-CH 1200V 947A

Microchip Technology

0
RFQ
MSCSM120AM02T6LIAG

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 947A (Tc) 2.6mOhm @ 480A, 20V 2.8V @ 36mA 2784nC @ 20V 36200pF @ 1000V 3.75kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM027CD3AG

MSCSM120AM027CD3AG

MOSFET 2N-CH 1200V 733A D3

Microchip Technology

1
RFQ
MSCSM120AM027CD3AG

Datasheet

- Module Box Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount D3
CAS380M17HM3

CAS380M17HM3

MOSFET 2N-CH 1700V 532A MODULE

Wolfspeed, Inc.

1
RFQ
CAS380M17HM3

Datasheet

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1700V (1.7kV) 532A (Tc) 3.74mOhm @ 380A, 15V 3.6V @ 152mA 1494nC @ 15V 4700pF @ 1200V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
SSM6N15AFE,LM

SSM6N15AFE,LM

MOSFET 2N-CH 30V 0.1A ES6

Toshiba Semiconductor and Storage

10
RFQ
SSM6N15AFE,LM

Datasheet

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 100mA 4Ohm @ 10mA, 4V 1.5V @ 100µA - 13.5pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
DMG6301UDW-13

DMG6301UDW-13

MOSFET 2N-CH 25V 0.24A SOT363

Diodes Incorporated

0
RFQ
DMG6301UDW-13

Datasheet

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 25V 240mA 4Ohm @ 400mA, 4.5V 1.5V @ 250µA 0.36nC @ 4.5V 27.9pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
DMN62D0UV-7

DMN62D0UV-7

MOSFET 2N-CH 60V 0.49A SOT563

Diodes Incorporated

0
RFQ
DMN62D0UV-7

Datasheet

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 490mA (Ta) 2Ohm @ 100mA, 4.5V 1V @ 250µA 0.5nC @ 4.5V 32pF @ 30V 470mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
2N7002DWS-7

2N7002DWS-7

MOSFET 2N-CH 60V 0.247A SOT363

Diodes Incorporated

0
RFQ
2N7002DWS-7

Datasheet

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 247mA (Ta) 4Ohm @ 500mA, 10V 2.5V @ 250µA 0.4nC @ 4.5V 41pF @ 25V 290mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
PJS6801_S1_00001

PJS6801_S1_00001

MOSFET 2P-CH 30V 3.2A SOT23-6

Panjit International Inc.

0
RFQ
PJS6801_S1_00001

Datasheet

- SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 3.2A (Ta) 74mOhm @ 3.2A, 10V 1.3V @ 250µA 15nC @ 10V 633pF @ 15V 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
SQ1902AEL-T1_GE3

SQ1902AEL-T1_GE3

MOSFET 2N-CH 20V 0.78A SC70-6

Vishay Siliconix

0
RFQ
SQ1902AEL-T1_GE3

Datasheet

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 780mA (Tc) 415mOhm @ 660mA, 4.5V 1.5V @ 250µA 1.2nC @ 4.5V 75pF @ 10V 430mW -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SC-70-6
SH8KE5TB1

SH8KE5TB1

100V 2.5A, DUAL NCH+NCH, SOP8, P

Rohm Semiconductor

0
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
SQJ748EP-T1_GE3

SQJ748EP-T1_GE3

AUTOMOTIVE DUAL N-CHANNEL 40V (D

Vishay Siliconix

0
RFQ
SQJ748EP-T1_GE3

Datasheet

TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 72A (Tc) 6.88mOhm @ 7A, 10V 3.5V @ 250µA 21nC @ 10V 1230pF @ 25V 66W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8L Dual BWL
SIA921EDJ-T4-GE3

SIA921EDJ-T4-GE3

MOSFET 2P-CH 20V 4.5A PPAK8X8

Vishay Siliconix

0
RFQ
SIA921EDJ-T4-GE3

Datasheet

TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4.5A 59mOhm @ 3.6A, 4.5V 1.4V @ 250µA 23nC @ 10V - 7.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
SQJB44EP-T1_JE3

SQJB44EP-T1_JE3

AUTOMOTIVE DUAL N-CHANNEL 40V (D

Vishay Siliconix

0
RFQ
SQJB44EP-T1_JE3

Datasheet

TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 30A (Tc) 5.2mOhm @ 8A, 10V 2.2V @ 250µA 50nC @ 10V 3075pF @ 25V 48W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
HP8KB5TB1

HP8KB5TB1

40V 16.5A, DUAL NCH+NCH, HSOP8,

Rohm Semiconductor

0
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
HP8KC5TB1

HP8KC5TB1

60V 12A, DUAL NCH+NCH, HSOP8, PO

Rohm Semiconductor

0
RFQ

-

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
ISA220280C03LMDSXTMA1

ISA220280C03LMDSXTMA1

ISA220280C03LMDSXTMA1

Infineon Technologies

0
RFQ
ISA220280C03LMDSXTMA1

Datasheet

OptiMOS™ 3 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc) 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V 2.7V @ 1mA 13.4nC @ 10V 1400pF @ 15V 1.4W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8-920
SIZF918BDT-T1-GE3

SIZF918BDT-T1-GE3

DUAL N-CHANNEL 30 V (D-S) MOSFET

Vishay Siliconix

0
RFQ
SIZF918BDT-T1-GE3

Datasheet

TrenchFET® Gen IV 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 25A (Ta), 73A (Tc), 41A (Ta), 158A (Tc) 3.3mOhm @ 10A, 10V, 1.4Ohm @ 15A, 10V 2.2V @ 250µA 29nC @ 10V, 77nC @ 10V 1290pF @ 15V, 3350pF @ 15V 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair® (6x5)
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