FET, MOSFET Arrays

制造商 Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FF6MR12W2M1HB11BPSA1

FF6MR12W2M1HB11BPSA1

MOSFET 2N-CH 1200V 145A MODULE

Infineon Technologies

18
RFQ
FF6MR12W2M1HB11BPSA1

Datasheet

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 145A (Tj) 5.4mOhm @ 150A, 18V 5.15V @ 60mA 446nC @ 18V 13200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
FS13MR12W2M1HPB11BPSA1

FS13MR12W2M1HPB11BPSA1

MOSFET

Infineon Technologies

18
RFQ
FS13MR12W2M1HPB11BPSA1

Datasheet

- - Tray Active - - - - - - - - - - - - - - -
FF4MR12W2M1HPB11BPSA1

FF4MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V AG-EASY2B

Infineon Technologies

17
RFQ
FF4MR12W2M1HPB11BPSA1

Datasheet

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 170A 4mOhm @ 200A, 18V 5.15V @ 80mA 594nC @ 18V 17600pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY2B
F411MR12W2M1HPB76BPSA1

F411MR12W2M1HPB76BPSA1

MOSFET

Infineon Technologies

9
RFQ
F411MR12W2M1HPB76BPSA1

Datasheet

- - Tray Active - - - - - - - - - - - - - - -
FF6MR12KM1HPHPSA1

FF6MR12KM1HPHPSA1

MOSFET

Infineon Technologies

10
RFQ
FF6MR12KM1HPHPSA1

Datasheet

- - Tray Active - - - - - - - - - - - - - - -
FF6MR20W2M1HB70BPSA1

FF6MR20W2M1HB70BPSA1

FF6MR20W2M1HB70BPSA1

Infineon Technologies

15
RFQ
FF6MR20W2M1HB70BPSA1

Datasheet

EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2000V (2kV) 160A (Tj) 8.1mOhm @ 160A, 18V 5.15V @ 112mA 780nC @ 3V 24100pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount -
F3L6MR20W2M1HB70BPSA1

F3L6MR20W2M1HB70BPSA1

F3L6MR20W2M1HB70BPSA1

Infineon Technologies

15
RFQ
F3L6MR20W2M1HB70BPSA1

Datasheet

EasyPACK™ Module Tray Active Silicon Carbide (SiC) 4 N-Channel Silicon Carbide (SiC) 2000V (2kV) 155A (Tj) 8.7mOhm @ 100A, 18V 5.15V @ 112mA 297nC @ 18V 24100pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount -
FF3MR12KM1HHPSA1

FF3MR12KM1HHPSA1

MOSFET 2N-CH 1200V 190A AG62MMHB

Infineon Technologies

19
RFQ
FF3MR12KM1HHPSA1

Datasheet

CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 190A (Tc) 4.44mOhm @ 280A, 18V 5.1V @ 112mA 800nC @ 18V 24200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
FF3MR12KM1HPHPSA1

FF3MR12KM1HPHPSA1

MOSFET 2N-CH 1200V 220A AG62MMHB

Infineon Technologies

13
RFQ
FF3MR12KM1HPHPSA1

Datasheet

CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 220A 4.44mOhm @ 280A, 18V 5.1V @ 112mA 800nC @ 18V 24200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
FF5MR20KM1HHPSA1

FF5MR20KM1HHPSA1

MOSFET

Infineon Technologies

9
RFQ
FF5MR20KM1HHPSA1

Datasheet

- - Tray Active - - - - - - - - - - - - - - -
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